
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V GS
SFP9530
Fig 2. Transfer Characteristics
Top :
- 15 V
- 10 V
10 1
- 8.0 V
- 7.0 V
10 1
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
175 o C
10 0
10 0
@ Notes :
25 o C
@ Notes :
1. V GS = 0 V
2. V DS = -40 V
1. 250 μ s Pulse Test
2. T C = 25 o C
- 55 o C
3. 250 μ s Pulse Test
10 -1 -1
10
10 0
10 1
10 -1
2
4
6
8
10
1.0
0.8
0.6
0.4
-V DS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
V GS = -10 V
10 1
10 0
-V GS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
175 o C
@ Notes :
0.2
V GS = -20 V
@ Note : T J = 25 o C
25 o C
1. V GS = 0 V
2. 250 μ s Pulse Test
0.0
0
7
14
21
28
35
42
10 -1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1500
-I D , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
C iss = C gs + C gd ( C ds = shorted )
-V SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
C iss
C oss = C ds + C gd
C rss = C gd
10
V DS = -20 V
V DS = -50 V
V DS = -80 V
1000
500
C oss
C rss
@ Notes :
1. V GS = 0 V
2. f = 1 MHz
5
@ Notes : I D =-10.5 A
0 0
10
10 1
0
0
5
10
15
20
25
30
35
-V DS , Drain-Source Voltage [V]
Q G , Total Gate Charge [nC]